檢視 MOS集成电路的原始碼

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|<center>'''MOS集成电路'''<br><img
src="https://gimg2.baidu.com/image_search/src=http%3A%2F%2Fwww.pianshen.com%2Fimages%2F589%2Faebbfdc4afe2283222c94af40c26ee4d.png&refer=http%3A%2F%2Fwww.pianshen.com&app=2002&size=f9999,10000&q=a80&n=0&g=0n&fmt=auto?sec=1655294542&t=1f60325a898e873004ba27882b444065 " width="280"></center><small>  圖片來自百度</small> 
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'''MOS集成电路'''是以金属-氧化物-半导体（MOS）场[[效应晶体管]]为主要元件构成的[[集成电路]]。简称MOSIC 。1964年研究出绝缘栅场效应晶体管。直到1968年解决了MOS器件的稳定。

MOS集成电路是一种常用的集成电路。最小单元是反相器，由两只金属一氧化物-半导体场效应晶体管组成。这种集成工艺主要用于[[数字集成电路]]的制造，电路集成度可以很高。<ref>[[夏征农，陈至立主编；干福熹编,大辞海 信息科学卷,上海辞书出版社,2015.12,第203页]]</ref> 

*中文名:[[集成Mos管]]

*外文名:metal oxide semiconductor

*简    称:MOSIC

*主要元件:金属-氧化物-半导体场效应晶体管