安霞
人物履歷
科研/教育經歷
2006年1月北京大學微電子學與固體電子學博士畢業，獲理學博士學位。畢業後留校工作，2010年8月起任職副教授。
研究方向
現主要從事新型微納器件及其相關集成技術研究；新型微納器件輻射效應、損傷機理及加固技術研究方面的工作。
研究成果
主持國家科技重大專項1項（「新結構器件研究」）、國家自然科學基金（青年基金）項目、預研項目各1項，作為課題負責人參加j973項目2項；作為北大方負責人參加國家自然科學基金重點項目2項，作為技術骨幹參加973課題1項、國家科技重大專項2項。《半導體學報》編委，是《IEEE Transactions on Electron Devices》、《IEEE Transactions on Nuclear Science》、《Journal of Applied Physics》、《中國科學》、《物理學報》、《半導體學報》、《中國物理快報》等期刊審稿人。在EDL、APL、SST等國內外學術期刊發表論文40餘篇，申請國內發明專利50餘項、國際發明專利10項。
學術成果
論著
1、Ru Huang, Xia An, Junhua Liu, Xing Zhang, 「New device technologies for green micro/nano electronics」(Chapter 5), in 「Green micro/nano electronics」 (Chief Editor: Yangyuan Wang), Science Press, Beijing, 2013
2、Weikang Wu, Xia An*, Taotao Que, Xing Zhang, Dongjun Shen, Gang Guo and Ru Huang*, 「Investigation of a radiation-hardened quasi-SOI device: performance degradation induced by single ion irradiation」, Semiconductor Science and Technology, vol. 31, no.10, 105009 (6pp) (2016)
3、LIN Meng, AN Xia*, LI Ming*, YUN QuanXin, LI Min, LI ZhiQiang, LIU PengQiang, ZHANG Xing and HUANG Ru*, 「Ge surface passivation by GeO2 fabricated by N2O plasma oxidation」, Science China-Information Sciences ( Sci. China Inf. Sci.), vol.58, no.4，042403（5pp）(2015)
4、Weikang Wu, Xia An*, Fei Tan, Yehua Chen, Jingjing Liu, Yao Zhang, Xing Zhang, Dongjun Shen, Gang Guo and Ru Huang*,「Impact of heavy ion irradiation on CMOS current mirrors based on SOI and bulk Si substrates: mismatch and output impedance」, Semiconductor Science and Technology, vol. 30, 115002 (7pp) (2015)
5、安霞, 黃如, 李志強, 雲全新, 林猛, 郭岳, 劉朋強, 黎明, 張興，「高遷移率Ge溝道器件研究進展」,物理學報，卷：60，期：20，208501（12pp）（2015）
6、Fei Tan*, Ru Huang*, Xia An*, Weikang Wu, Hui Feng, Liangxi Huang, Jiewen Fan, Xing Zhang and Yangyuan Wang, 「Total ionizing dose (TID) effect and single event effect (SEE) in quasi-SOI nMOSFETs」, Semiconductor Science and Technology, vol.29, 015010(7pp)（2014）
7、Zhiqiang Li, Xia An*, Min Li, Quanxin Yun, Meng Lin, Ming Li*, Xing Zhang, and Ru Huang*, 「Morphology and Electrical Performance Improvement of NiGe/Ge Contact by P and Sb Co-implantation」, IEEE Electron Device Letters, vol. 34, no.5, pp.596-598 （May 2013）
8、Zhiqiang Li, Xia An*, Quanxin Yun, Meng Lin, Min Li, Ming Li*, Xing Zhang, and Ru Huang*, 「Low Specific Contact Resistivity to n-Ge and Well-Behaved Ge n+/p Diode Achieved by Multiple Implantation and Multiple Annealing Technique」, IEEE Electron Device Letters, vol. 34, no. 9, pp. 1097–1099（Sep. 2013）
9、Fei Tan, Xia An*, Shoubin Xue, Liangxi Huang, Weikang Wu, Xing Zhang, Ru Huang, 「Total ionizing dose and single-event effect in vertical channel double-gate nMOSFETs」, Semiconductor Science and Technology, vol. 28, no.5, 055003(5pp) (May 2013)
10、Meng Lin, Ming Li*, Xia An*, Quanxin Yun, Min Li, Zhiqiang Li, Pengqiang Liu, Xing Zhang and Ru Huang*, 「Surface passivation of the Ge substrate by novel nitrogen plasma immersion treatment」, Semiconductor Science and Technology, vol.28, no.8, 085010 (4pp) (2013)
11、Fei Tan, Ru Huang*, Xia An*, Yimao Cai, Yue Pan, Weikang Wu, Hui Feng, Xing Zhang, and Yangyuan Wang, 「Investigation on the Response of TaOx–based Resistive Random-Access Memories to Heavy-Ion Irradiation」, IEEE Transactions on Nuclear Science, vol. 60, no. 6, pp.4520-4525 (Dec. 2013)
12、Yue Guo, Xia An*, Runsheng Wang, Xing Zhang and Ru Huang, 「Investigation on Morphology and Thermal Stability of NiGe Utilizing Ammonium Fluoride Pretreatment for Germanium-Based Technology」, IEEE Electron Device Letters, vol. 32, no. 4, pp.554-556 ( April 2011)
13、Yue Guo, Xia An*, Ru Huang*, Chunhui Fan and Xing Zhang, 「Tuning of the Schottky barrier height in NiGe/n-Ge using ion-implantation after Germanidation technique」, Applied Physics Letters, vol. 96, no. 14, 143502 (3pp) (April 2010)
14、Sihao Wang, Yunpeng Pei, Ru Huang*，Wenhua Wang, Wen Liu, Shoubin Xue, Xia An*, Jingquan Tian and Yangyuan Wang, 「A model for radiation-induced off-state leakage current in N-channel metal-oxide-semiconductor transistors with shallow trench isolation」, Journal of Applied Physics, vol. 107, 024515 (4pp) (2010)
15、Xia An, Qing Lu, Ru Huang, Wenhua Wang, Shoubin Xue, Baoping He and Xing Zhang, 「Total ionizing dose effects of novel vertical channel double-gate nMOSFETs」, Semicond. Sci. Technol., vol.24, no.8, 085012 (4pp) (2009)
16、Jing Zhuge, Xia An*, Ru Huang*, Han Xiao, Xiaoyu Hou, RunshengWang and YangyuanWang, 「A comparative study on analog/RF performance of UTB GOI and SOI devices」, Semicond. Sci. Technol., vol.23, 075009 (7pp) (2008)[1]