檢視张清纯的原始碼

'''张清纯'''
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|<center>'''张清纯'''<br><img src="https://faet.fudan.edu.cn/_upload/article/images/40/05/9393dc554331a437be6e95ed3e5a/293c6e0a-ca3f-4689-acfc-9f8546f840ec.jpg" width="280"></center><small>[https://www.fdsm.fudan.edu.cn/AboutUs/preview.html?uid=012018 圖片來自搜狗网]</small> 
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<ref>[https://www.gerenjianli.com/Mingren/Tags/6997/ 名人励志故事]</ref>
== 研究方向 ==
[[半导体]]物理与器件

[[宽带]]半导体器件物理、工艺、测试、产业化及应用

器件模拟及仿真

电力系统
== 教育工作经历 ==
2019.10-至今，[[复旦大学]]，工程与应用技术研究院，特聘教授

2019.04-2019.08，Alpha&Omega Semiconductors，技术部，资深主任工程师

2018.04-2019.04，北卡州立大学，电子和计算机系，客座教授

2017.10-2019.04，电力美国技术研究院，电力半导体器件部，主任

2005.02-2017.10，Cree, Inc，研发部，高级科学家

2001.10-2005.02，Rockwell Scientific Company，研发部，研究员

1997.09-2001.04，University of South Carolina，电子工程，博士

1994.09-1997.08，清华大学，电力电子技术，硕士

1987.09-1992.08，清华大学，微电子学，学士
== 代表性论文和著作 ==
J. Wang, V. Veliadis, J. Zhang, Y. Alsmadi, P. Wilson, and M. Scott, “A roadmap for Silicon Carbide adoption in power conversion applications”, IEEE Power Electronics Magazine, Vol. 5, No. 2, June 2018.

V. Veliadis, R. Kaplar, J. Zhang, M. Bakowski, S. Khalil, and P. moens, “WBG and UWBG materials and devices are examed in a new working group”, IEEE Power Electronics Magazine, Vol. 5, No. 2, June 2018.

H. O’Briean, A. Ogunniyi, J. Zhang, and B. Hull, “SiC MOSFETs designed and evaluated for linear mode operation”, 2017 IEEE 5th Workshop on Wide Bandgap Power Devices and Applications (WiPDA).

P. A. Ivanov, V. S. Yuferev, M. E. Levinshtein, J. Q. Zhang, J. W. Palmour, 'Collector Conductivity Modulation in 1200-V 4H-SiC BJTs', Materials Science Forum, Vol. 897, pp. 563-566, 2017.

<ref>[https://www.diyifanwen.com/tool/ 名人名言]</ref>

==参考文献==
{{Reflist}}
[[Category:文化藝術人物]]

[[Category:人文社科藝術人物]]